9:00 AM
Introduction
Andreas Schulze (imec)
 
9:15 AM
Keynote: CMOS Device Architecture Evolution and Metrology Challenges
Naoto Horiguchi (imec)
 
10:00 AM
Coffee Break
 
10:30 AM
Transmission Electron Microscopy for metrology and characterization of semiconductor devices
Bert Freitag (FEI)
 
11:00 AM
Nanofocused Raman Spectroscopy For Stress And Compositional Metrology
Thomas Nuytten (imec)
 
11:30 AM
The Development of In-Line Strain Measurements using High Resolution X-Ray Diffraction
Paul Ryan (Bruker Semi)
 
12:00 PM
Lunch
 
1:00 PM
Acoustic GHz-Microscopy: A non-destructive method for metrology in future microelectronic technologies
Sebastian Brand (Fraunhofer IMWS)
 
1:30 PM
Sheet Resistance and Mobility Measurements with Micro-Probes: from Planar to 3D Technologies
Janusz Bogdanowicz (imec)
 
2:00 PM
Atom probe tomography for advanced semiconductor nanodevices
Adeline Grenier (LETI)
 
2:30 PM
Coffee Break
 
3:00 PM
3D Nanometrology of High-Aspect-Ratio Structures using Scanning Probe Microscopy
Rodolf Herfst (TNO, The Netherlands)
 
3:20 PM
Single Crystal Doped Diamond Tips For Enhanced Nano-Electrical Characterization
Jason Kilpatrick (Adama Innovations, Ireland)
 
3:40 PM
Compositional and Impurity Analysis in Confined Structures using Self-Focusing SIMS
Wilfried Vandervorst (imec)
 
4:00 PM
Cathodoluminescence Analysis for Beyond-Silicon CMOS Logic
Jean Berney (Attolight, Switzerland)
 
4:20 PM
Exploring Second-Harmonic Generation Spectroscopy for the Characterization of MX2
Vincent Vandelon (TU Eindhoven, The Netherlands)
 
 
 
 

 

 

 

 

 

 

 

 

 

 

 

 

 

Login Form