|Dr. Naoto Horiguchi (imec, Belgium)|
|Naoto Horiguchi is a distinguished member of technical staff in logic Si CMOS scaling program at IMEC, Leuven, Belgium. His current focus is the research and development of scaled FinFETs and nanowire FETs for 16-5 nm node, especially scaled module integration by using advanced patterning, advanced doping techniques and characterization, source-drain stressor integration, gate last integration, advanced contact, low k spacer and SiGe channel device integration. He holds more than 20 international patents and authored or co-authored more than 200 technical papers.|
|Dr. Bert Freitag (FEI, The Netherlands)|
|Bert Freitag obtained his PhD degree in Experimental Physics from the University of Cologne (Germany) in 1995. He was a postdoctoral researcher at the Institute for Inorganic Chemistry in Bonn (Germany) before joining FEI in 2000 as an application specialist. During his time at FEI he had various roles in application and science, such as product manager for TEM and marketing manager for the high-end TEM research market. Today he works as Director Technology in the Materials Science BU.|
|Dr. Paul Ryan (Bruker, UK)|
|Paul has over 20 years experience in X-ray metrology and over 16 years experience in the semiconductor industry. He originally joined Bede in 2001 and held various scientific, product development and technology leadership positions within Bede, including being the VP of Technology. Paul joined Jordan Valley in 2008 as part of the acquisition of Bede by Jordan Valley, and is the General Manager of the UK subsidiary and a Corporate Vice President. In this role he led the development of the scanning X-ray metrology systems for both the Si and Compound semiconductor business units. In 2015 Jordan Valley was acquired by Bruker and Paul moved into the role of Director of Product Management, responsible for all of the X-ray products in the semiconductor division of Bruker.
Paul obtained his BSc (Hons) in Physics in 1995 and PhD in 1999 from the University of Leeds. The subject of his PhD was the MBE growth and characterisation of thin film multilayers, using X-ray, electrical and magneto-optical metrology techniques.
|Dr. Sebastian Brand (Fraunhofer IMWS, Germany)|
|Sebastian Brand is a senior scientist at the Fraunhofer Institute for Microstructure of Materials and Systems in Halle, Germany where he leads a research-, development and application team for non-destructive defect localization in the field of failure analysis and metrology in microelectronics and technology development. Sebastian holds a Ph.D. in electrical engineering which he received in 2004 from the University of Magdeburg, Germany. In 2004 and 2005 he joined the University of Toronto and Ryerson University in Toronto, Canada as a post-doctoral fellow working in the field of cancer research with focus on ultrasonically based methods for early detection of oncological treatment responses. Sebastian has 17 years of experience in the field of acoustics in life- and material sciences and authored /co-authored more than 50 publications in this and adjacent research fields. His current research extends from acoustic methods (Scanning Acoustic Microscopy) over Lock-In-Thermography to magnetic imaging microscopy where he and his team undertake research and development of non-destructive defect localization and characterization to address challenges arising from novel technologies like 3D-Integration. In the years 2009 – 2015 Sebastian and his team developed a novel Scanning Acoustic GHz-microscope in close collaboration with industry for the application in microelectronics failure analysis and metrology.|
|Dr. Adeline Grenier (LETI, France)|
|Adeline Grenier is a reseacher-engineer at CEA (Commissariat à l'énergie atomique et aux énergies alternatives). She graduated from the University of Rouen. She obtained a Ph.D. in 2008 on structural, chemical and magnetic investigations of magnetostrictive multilayers. Her Ph.D. was carried out at Groupe de Physique des Matériaux, one of the world leader in atom probe tomography (APT) development. In 2009, she moved to the CEA-LETI for a post-doctoral position on development and application of electron tomography combined to atom probe tomography on semiconductor devices and nanowires. Since 2010, she is in charge of development and application of atom probe tomography at CEA-LETI, mainly focused on semiconductor microelectronic samples and devices.|
|Dr. Janusz Bogdanowicz (imec, Belgium)|
|Janusz Bogdanowicz received the M.Sc. degree in physical engineering in 2005 from the University of Liege, Belgium. In 2011, he received his Ph.D. degree in physics from the KULeuven, Belgium. After a postdoc at KULeuven, he has joined the Materials and Component Analysis team of IMEC since June 2014. He has ~10 years of experience in electrical characterization of shallow semiconducting layers using conventional techniques but also less conventional optical reflection techniques. His main research interest extends from metrology and the mathematical modelling of physical phenomena. He is author/co-author of about 30 publications, among which he authored a 25-page report about the theoretical aspects of the Photomodulated Optical Reflectance technique on doped semiconducting layers published in the Journal of Applied Physics and a book summarizing the results of his Ph.D. thesis as part of the Springer Theses program, “recognizing outstanding Ph.D. research”. His current research topics cover, on the experimental side, micro-four-point-probe and microHall measurements of state-of-the-art semiconducting devices and, on the theoretical side, the fundamental understanding of light interactions with nanoscale structures during atomprobe and Raman measurements.|
|Dr. Thomas Nuytten (imec, Belgium)|
|Thomas Nuytten received the Ph. D. degree in physics from the KU Leuven in 2009 and subsequently worked as a postdoctoral researcher in the field of semiconductor nanostructures and energy conversion systems. In 2013, he joined imec in Leuven as a senior researcher where his main interests include spectroscopic and electrical characterization of next-generation semiconductor technologies.|